SIMS

SIMS(Secondary Ion Mass Spectrometry) 

Secondary Ion Mass Spectrometry (SIMS) is based on the sputtering of solid sample surfaces by primary ion bombardment. Primary ions impinging on the sample surface trigger a cascade of atomic collisions. A portion of the single atoms and clusters ejected are spontaneously ionized. These secondary ions are characteristic of the composition of the analyzed area. They are separated according to their mass/charge ratio. Elemental mapping or depth profiles containing quantitative information can be obtained for a selected mass.

 

 


 

 Principle of SIMS Analysis

 


 Applications of SIMS  

 Depth profiling of elements 

 Contamination analysis

 Ion implantation characteristics

 

 


 

Eng. Contact Window

Ms.Huang  ext.6218

E-mail: huini_huang@msscorps.com