SIMS(Secondary Ion Mass Spectrometry) 

Secondary Ion Mass Spectrometry (SIMS) is based on the sputtering of solid sample surfaces by primary ion bombardment. Primary ions impinging on the sample surface trigger a cascade of atomic collisions. A portion of the single atoms and clusters ejected are spontaneously ionized. These secondary ions are characteristic of the composition of the analyzed area. They are separated according to their mass/charge ratio. Elemental mapping or depth profiles containing quantitative information can be obtained for a selected mass.




 Principle of SIMS Analysis


 Applications of SIMS  

 Depth profiling of elements 

 Contamination analysis

 Ion implantation characteristics




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Ms.Huang  ext.6218