SEM/EDS

MSS new high-end Hitachi Regulus 8220 SEM released for service

 

Hitachi Regulus 8220 is the latest generation of cold field emitter SEM(CFE-SEM). Its CFE provides ideal source for high resolution imaging with smaller energy spread, make it as a perfect tool for failure analysis, especially for advanced technology node chips.

 
Specifications of Hitachi Regulus 8220 and Hitachi 8220
 
Applications
 
Figure 1: Hitachi Regulus 8220 SEM low KV VC images at a) memory area and b) logic area, showing obvious contrast differences among different
contacts (CT) than previous models.
 
Figure 2: With superior contrast, Regulus 8220 can easily identify failures/abnormalities than previous models.
 
Figure 3: Regulus 8220 equipped with BSE detector can provide better view of sub-surface and abnormalities.

UHR SEM

 

SEM/EDS is a commonly-used tool for chemical analysis in IC industry.

With the help of the new generation windowless EDS, MSS firstly demonstrates
the resolution of the SEM/EDS can be at least down to 10 nm.
 
– SEM results
Figure 1: a) X-cut cross-section SEM image of the Samsung Galaxy S8
CPU at the 6T-SRAM area. b) Zoom-in SEM image at an area marked by
a red dotted rectangle in a). c) Y-cut cross-section SEM image also at the
6T-SRAM area. d) Zoom-in SEM image at an area marked by a red dotted
rectangle in c).
 
– SEM/EDS results
Figure 2: SEM/EDS analysis on an area marked by a green dotted rectangle
in Figure 1d. Individual elementary distribution is shown in a) Cu,
b) O, c) Si, d) N, and e) Ta. Overlaying all detected elements is exhibiting
in f). g) Zoom-in SEM image at the edge of the Cu wire, showing the
thickness of the Ta layer is 9.19 nm (top) and 11.87 nm (bottom). In e),
Ta signal can be clearly resolved demonstrates that the spatial resolution
of this windowless EDS can be at least down to 10 nm.

 

 

 

 

 

HR SEM

SEM/EDS analysis of anomalous ACF bonding process.
The spectra show the element distribution of the ACF ball.

 

 

Cross-section SEM images show the IC process structure of a 1P6M device.

 


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Ms. Chen ext.6211

E-mail: lynn_chen@msscorps.com