Thermal EMMI (InSb)

 

Technical Concept

 

Defective or underperforming semiconductor devices often show an anomalous distribution of the local power dissipation, leading to local temperature increases. ELITE VX system utilizes Lock-in IR Thermography (LIT) to accurately and efficiently locate these areas of interest.

 

Lock-in IR Thermography (LIT) is a form of dynamic IR thermography which provides a much better signal-to-noise ratio, increased sensitivity and higher feature resolution than steady-state thermography. LIT can be used in IC analysis to locate line shorts, ESD defects, oxide damage, defective transistors and diodes, and device latch-ups. LIT is performed in a natural ambient environment without requiring light-shielding boxes.

 

 

 

Equipment

 

Figure-1.  Lock-in IR Thermography (LIT) – ELITE VX

 

 

Features

 

▪  The highest sensitivity thermal emission system available in the market

▪  Real-time lock-in measurement

▪  Differential temperature resolution of < 1mK after a few seconds; < 10 uK after a few hours.

▪  Contactless absolute temperature mapping.

▪  Through-package and stacked die analysis.

▪  Six position turret with custom lenses optimized for MWIR emission.

 
Figure-2. The ability to locate a thermal source in 3D makes the ELITE system well-suited for stacked-die analysis.
 
 
Figure-3. Differential temperature resolution of < 1mK after a few seconds; < 10 uK after a few hours.
 
 
 
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Eng. Contact Window
Mr. Lee  ext.6858

E-mail: pfa@msscorps.com