SEM and SEM/EDS investigation on a Samsung Galaxy S8 10 nm CPU chip

SEM/EDS is a commonly-used tool for chemical analysis in IC industry.

With the help of the new generation windowless EDS, MSS firstly demonstrates
the resolution of the SEM/EDS can be at least down to 10 nm.
 
– SEM results
Figure 1: a) X-cut cross-section SEM image of the Samsung Galaxy S8
CPU at the 6T-SRAM area. b) Zoom-in SEM image at an area marked by
a red dotted rectangle in a). c) Y-cut cross-section SEM image also at the
6T-SRAM area. d) Zoom-in SEM image at an area marked by a red dotted
rectangle in c).
 
– SEM/EDS results
Figure 2: SEM/EDS analysis on an area marked by a green dotted rectangle
in Figure 1d. Individual elementary distribution is shown in a) Cu,
b) O, c) Si, d) N, and e) Ta. Overlaying all detected elements is exhibiting
in f). g) Zoom-in SEM image at the edge of the Cu wire, showing the
thickness of the Ta layer is 9.19 nm (top) and 11.87 nm (bottom). In e),
Ta signal can be clearly resolved demonstrates that the spatial resolution
of this windowless EDS can be at least down to 10 nm.