As the leading brand of material analysis in the semiconductor analysis business, MSS pays much attention to R&D of analysis technology. We have delivered many niche and advanced analysis methods in MA/FA services. Among such methods, the self-developed vacuum deposition technology, atomic layer deposition (ALD), and special sample preparation methods are even unparalleled and unique in the world.
The ALD is used in MA/FA sample preparation to protect samples of interest being altered or modified and keep their primitive morphology during whole analysis procedures. With continually downscaling of fabrication technology for world leading Fabs, this protection method is becoming more and more crucial during R&D. For the most advanced technology node development (5 nm and 3 nm), due to their intrinsic properties, key materials, such as EUV photoresist and low-k dielectric could be easily altered or even damaged during examination by electron microscopy. This could give wrong information to R&D engineers and make wrong decisions.
The MSS self-developed ALD technology is the only method in the world providing rigid protecting to structures of interest and their primitive morphology and elemental analysis can be examined by electron microscopy without any damages. The ALD technology can also be used for other MA/FA service items to show its superior advantage comparing with other methods.
MSS will keep continually extending ALD capacity and capability in Hsinchu, Tainan, and Nanjing , still, the capacity is limited. In order to help faithful customers to win in their intense competitions, MSS ALD will first support customers who consider MSS as the solo material analysis partner.